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IXGH20N60

IXGH20N60

IXGH20N60

IXYS

IGBT 600V 40A 150W TO247AD

SOT-23

IXGH20N60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*20N60
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 300 ns
Test Condition 480V, 20A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 1430 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 100ns/600ns
Switching Energy 1.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant

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