IHW40N65R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IHW40N65R5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
230W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
230W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
80A
Reverse Recovery Time
90 ns
Collector Emitter Breakdown Voltage
650V
Turn On Time
59 ns
Test Condition
400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 40A
Turn Off Time-Nom (toff)
321 ns
Gate Charge
193nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
30ns/258ns
Switching Energy
630μJ (on), 140μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.557267
$1.557267
10
$1.469120
$14.6912
100
$1.385962
$138.5962
500
$1.307512
$653.756
1000
$1.233501
$1233.501
IHW40N65R5XKSA1 Product Details
IHW40N65R5XKSA1 Description
IHW40N65R5XKSA1 is a type of IGBT with integrated diode in packages offering space-saving advantage, which is optimized for inductive cooking, and soft & hard switching applications. It is designed based on TRENCHSTOP and Fieldstop technology for 600V applications. The IHW40N65R5XKSA1 IGBT is characterized by very tight parameter distribution, a short circuit capability of 5μs, a maximum junction temperature of 175°C, and more.