IRG4PSH71UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PSH71UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Supplier Device Package
SUPER-247™ (TO-274AA)
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
350W
Current Rating
99A
Element Configuration
Single
Power Dissipation
350W
Input Type
Standard
Power - Max
350W
Rise Time
70ns
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
99A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
99A
Collector Emitter Saturation Voltage
2.7V
Test Condition
960V, 70A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 70A
Gate Charge
370nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
51ns/280ns
Switching Energy
4.77mJ (on), 9.54mJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.301567
$3.301567
10
$3.114686
$31.14686
100
$2.938383
$293.8383
500
$2.772059
$1386.0295
1000
$2.615150
$2615.15
IRG4PSH71UPBF Product Details
IRG4PSH71UPBF Desription
The Infineon Technologies IRG4PSH71UPBF is an N-Channel Insulated Gate Bipolar Transistor.
IRG4PSH71UPBF Features
UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
Industry-benchmark Super-247 package with higher power handling capability compared to the same footprint TO-247