FGA25N120ANTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA25N120ANTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
1.2kV
Max Power Dissipation
310W
Current Rating
25A
Base Part Number
FGA25N120A
Element Configuration
Single
Power Dissipation
310W
Input Type
Standard
Power - Max
310W
Collector Emitter Voltage (VCEO)
3.2V
Max Collector Current
40A
Continuous Drain Current (ID)
25A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
40A
Test Condition
600V, 25A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 25A
IGBT Type
NPT
Gate Charge
200nC
Current - Collector Pulsed (Icm)
75A
Td (on/off) @ 25°C
60ns/170ns
Switching Energy
4.8mJ (on), 1mJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FGA25N120ANTU Product Details
FGA25N120ANTU Description
FGA25N120ANTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGA25N120ANTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FGA25N120ANTU has the common source configuration.