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FGA25N120ANTU

FGA25N120ANTU

FGA25N120ANTU

ON Semiconductor

FGA25N120ANTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA25N120ANTU Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Max Power Dissipation 310W
Current Rating 25A
Base Part Number FGA25N120A
Element Configuration Single
Power Dissipation 310W
Input Type Standard
Power - Max 310W
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 40A
Continuous Drain Current (ID) 25A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 40A
Test Condition 600V, 25A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A
IGBT Type NPT
Gate Charge 200nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 60ns/170ns
Switching Energy 4.8mJ (on), 1mJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
FGA25N120ANTU Product Details

FGA25N120ANTU Description

 

FGA25N120ANTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGA25N120ANTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FGA25N120ANTU has the common source configuration.

 

 

FGA25N120ANTU Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FGA25N120ANTU Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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