IRG8P60N120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG8P60N120KDPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
420W
Reach Compliance Code
unknown
Element Configuration
Single
Input Type
Standard
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
60A
Reverse Recovery Time
210 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
100A
Collector Emitter Saturation Voltage
1.7V
Test Condition
600V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
Gate Charge
345nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
40ns/240ns
Switching Energy
2.8mJ (on), 2.3mJ (off)
Height
20.7mm
Length
15.87mm
Width
5.31mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRG8P60N120KDPBF Product Details
Description
The IRG8P60N120KDPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The IRG8P60N120KDPBF belongs to an insulated-gate bipolar transistor (IGBT). It is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. A metal-oxide-semiconductor (MOS) gate arrangement controls four alternating layers (P–N–P–N).