IXGR40N60CD1

new-10%

Manufacturer part number:IXGR40N60CD1

Manufacturer:IXYS

Description:IGBT 600V 75A 200W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR40N60CD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	3.5 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	60 ns
Test Condition	480V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A
Turn Off Time-Nom (toff)	255 ns
IGBT Type	PT
Gate Charge	116nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	25ns/100ns
Switching Energy	850μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	150ns
RoHS Status	RoHS Compliant