IKP06N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKP06N60TXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
88W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
88W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
12A
Reverse Recovery Time
123 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
17 ns
Test Condition
400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 6A
Turn Off Time-Nom (toff)
249 ns
IGBT Type
Trench Field Stop
Gate Charge
42nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
9ns/130ns
Switching Energy
200μJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.937634
$0.937634
10
$0.884560
$8.8456
100
$0.834491
$83.4491
500
$0.787255
$393.6275
1000
$0.742694
$742.694
IKP06N60TXKSA1 Product Details
IKP06N60TXKSA1 Description
IKP06N60TXKSA1 is an N-channel single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IKP06N60TXKSA1 is -40°C~175°C TJ and its maximum power dissipation is 88W. IKP06N60TXKSA1 has 3 pins and it is available in Tube packaging way.
IKP06N60TXKSA1 Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications