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IKP06N60TXKSA1

IKP06N60TXKSA1

IKP06N60TXKSA1

Infineon Technologies

IKP06N60TXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKP06N60TXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 88W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 88W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 12A
Reverse Recovery Time 123 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 17 ns
Test Condition 400V, 6A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 6A
Turn Off Time-Nom (toff) 249 ns
IGBT Type Trench Field Stop
Gate Charge 42nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 9ns/130ns
Switching Energy 200μJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.937634 $0.937634
10 $0.884560 $8.8456
100 $0.834491 $83.4491
500 $0.787255 $393.6275
1000 $0.742694 $742.694
IKP06N60TXKSA1 Product Details

IKP06N60TXKSA1 Description


IKP06N60TXKSA1 is an N-channel single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IKP06N60TXKSA1 is -40°C~175°C TJ and its maximum power dissipation is 88W. IKP06N60TXKSA1 has 3 pins and it is available in Tube packaging way.



IKP06N60TXKSA1 Features


  • Very low VCE(sat) 1.5V (typ.)

  • Maximum Junction Temperature 175°C

  • Short circuit withstand time 5s

  • Low EMI

  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode

  • Qualified according to JEDEC1 for target applications

  • Pb-free lead plating; RoHS compliant



IKP06N60TXKSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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