FGA15N120ANTDTU-F109 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGA15N120ANTDTU-F109 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Input Type
Standard
Power - Max
186W
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
330ns
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Power Dissipation-Max (Abs)
186W
Test Condition
600V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 15A
IGBT Type
NPT and Trench
Gate Charge
120nC
Current - Collector Pulsed (Icm)
45A
Td (on/off) @ 25°C
15ns/160ns
Switching Energy
3mJ (on), 600μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
8.5V
Fall Time-Max (tf)
180ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.91000
$2.91
10
$2.62000
$26.2
450
$2.05816
$926.172
900
$1.85657
$1670.913
1,350
$1.58074
$1.58074
FGA15N120ANTDTU-F109 Product Details
FGA15N120ANTDTU-F109 Description
FGA15N120ANTDTU-F109 is an ultra-fast recovery power rectifier. The Onsemi FGA15N120ANTDTU-F109 can be applied for General purposes, Switching mode power supply, Free-wheeling diode for motor application, and Power switching circuits applications due to the following features. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor FGA15N120ANTDTU-F109 is in the TO-220F package with 186W Power dissipation.
FGA15N120ANTDTU-F109 Features
High voltage and high reliability
High-speed switching
Low forward voltage
Peak Repetitive Reverse Voltage: 600V
Average Rectified Forward Current @ TC = 100°C: 20A