IRG4PC40SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC40SPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
160W
Terminal Position
SINGLE
Current Rating
60A
Number of Elements
1
Element Configuration
Dual
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
22 ns
Rise Time
18ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
650 ns
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
60A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Turn On Time
44 ns
Test Condition
480V, 31A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 31A
Turn Off Time-Nom (toff)
1940 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
22ns/650ns
Switching Energy
450μJ (on), 6.5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
570ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.800240
$3.80024
10
$3.585132
$35.85132
100
$3.382200
$338.22
500
$3.190755
$1595.3775
1000
$3.010146
$3010.146
IRG4PC40SPBF Product Details
IRG4PC40SPBF Description
IRG4PC40SPBFOptimised IGBTs are developed for medium frequency applications with fast response and offer the maximum efficiency possible to the customer. Infineon Technologies uses FRED diodes that have been optimized for use with IRG4PC40SPBF IGBTs.
IRG4PC40SPBF Features
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3