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STGWT80H65FB

  • STGWT80H65FB
  • STGWT80H65FB

STGWT80H65FB

STGWT80H65FB

STMicroelectronics

STGWT80H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWT80H65FB Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 469W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWT80
Element Configuration Single
Input Type Standard
Power - Max 469W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Test Condition 400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
IGBT Type Trench Field Stop
Gate Charge 414nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 84ns/280ns
Switching Energy 2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Height 20.1mm
Length 15.8mm
Width 5mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.196581 $5.196581
10 $4.902435 $49.02435
100 $4.624938 $462.4938
500 $4.363150 $2181.575
1000 $4.116179 $4116.179
STGWT80H65FB Product Details

STGWT80H65FB Description


The STGWT80H65FB  is an IGBT developed using an advanced proprietary trench gate and field stop structure. It is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.



STGWT80H65FB Features


  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • VCE(sat) = 1.6 V (typ.) @ IC = 80 A

  • Tight parameter distribution

  • Safe paralleling

  • Low thermal resistance



STGWT80H65FB Applications


  • Photovoltaic inverters

  • High-frequency converters


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