IHW50N65R5XKSA1                         Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

IHW50N65R5XKSA1                         Features

·Powerful monolithic reverse-conducting diode with low forward voltage

·TRENCHSTOP technology offers: -very tight parameter distribution

-high ruggedness and stable temperature behavior -very low Vcesat and low Eaf!

easy parallel switching capability due to positive temperature coefficient in VcEsat·Low EMI

·Qualified according to JESD-022 for target applications·Pb-free lead plating: RoHScompliant

*Complete product spectrum and PSpice

IHW50N65R5XKSA1                         Applications

·Induction cooking

nverterized microwave ovens

·Resonant converters