IXGR6N170A

new-10%

Manufacturer part number:IXGR6N170A

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.7KV 5.5A 3-Pin(3+Tab) ISOPLUS 247

Case Package:SOT-23

Datasheet:IXGR6N170A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	50W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Power - Max	50W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	5.5A
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Turn On Time	91 ns
Test Condition	850V, 6A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic	7V @ 15V, 3A
Turn Off Time-Nom (toff)	271 ns
Gate Charge	18.5nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	46ns/220ns
Switching Energy	590μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	65ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant