STGD7NC60HT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGD7NC60HT4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
70W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
7A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGD7
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
70W
Input Type
Standard
Turn On Delay Time
18.5 ns
Transistor Application
POWER CONTROL
Rise Time
8.5ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
116 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
25A
JEDEC-95 Code
TO-252AA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Max Breakdown Voltage
600V
Turn On Time
25.5 ns
Test Condition
390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 7A
Continuous Collector Current
14A
Turn Off Time-Nom (toff)
221 ns
Gate Charge
35nC
Current - Collector Pulsed (Icm)
50A
Td (on/off) @ 25°C
18.5ns/72ns
Switching Energy
95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.041683
$1.041683
10
$0.982720
$9.8272
100
$0.927094
$92.7094
500
$0.874617
$437.3085
1000
$0.825111
$825.111
STGD7NC60HT4 Product Details
STGD7NC60HT4 Description
The STGD7NC60HT4 is a high-speed IGBT built with sophisticated PowerMESHTM technology. This method ensures a good balance between switching performance and low on-state behavior. For resonant or soft-switching applications, this device is ideal.
STGD7NC60HT4 Features
Low on-voltage drop (VCE(sat))
High-frequency operation up to 70 kHz
STGD7NC60HT4 Applications
Motor drivers
High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies