FGA60N65SMD

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Manufacturer part number:FGA60N65SMD

Manufacturer:ON Semiconductor

Description:FGA60N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA60N65SMD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	600W
Number of Elements	1
Rise Time-Max	70ns
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	18 ns
Power - Max	600W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	104 ns
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	120A
Reverse Recovery Time	47 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.9V
Test Condition	400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 60A
IGBT Type	Field Stop
Gate Charge	189nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	18ns/104ns
Switching Energy	1.54mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	68ns
Height	20.1mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free