IKW20N60TAFKSA1

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Manufacturer part number:IKW20N60TAFKSA1

Manufacturer:Infineon Technologies

Description:IKW20N60TAFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKW20N60TAFKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Packaging	Tube
Published	2007
Series	TrenchStop®
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-40°C
Max Power Dissipation	166W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	*KW20N60
Reference Standard	AEC-Q101
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	41 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	36 ns
Test Condition	400V, 20A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 20A
Turn Off Time-Nom (toff)	299 ns
IGBT Type	Trench Field Stop
Gate Charge	120nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	18ns/199ns
Switching Energy	770μJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$2.902936	$2.902936
10	$2.738619	$27.38619
100	$2.583603	$258.3603
500	$2.437361	$1218.6805
1000	$2.299397	$2299.397

IKW20N60TAFKSA1 Description

The IKW20N60TAFKSA1 is an IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode.

IKW20N60TAFKSA1 Features

Very low V_CE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5μs
Designed for :

- Frequency Converters

- Uninterrupted Power Supply
TRENCHSTOP? and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- very high switching speed

- low V_CE(sat)
Positive temperature coefficient in V_CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant