IKW30N60DTPXKSA1

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Manufacturer part number:IKW30N60DTPXKSA1

Manufacturer:Infineon Technologies

Description:IKW30N60DTPXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKW30N60DTPXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2016
Series	TrenchStop™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	200W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	53A
Reverse Recovery Time	76 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	38 ns
Test Condition	400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Turn Off Time-Nom (toff)	279 ns
IGBT Type	Trench Field Stop
Gate Charge	130nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	15ns/179ns
Switching Energy	710μJ (on), 420μJ (off)
RoHS Status	ROHS3 Compliant