IKW30N65NL5XKSA1

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Manufacturer part number:IKW30N65NL5XKSA1

Manufacturer:Infineon Technologies

Description:IKW30N65NL5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKW30N65NL5XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2013
Series	TrenchStop™ 5
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	227W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	227W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	85A
Reverse Recovery Time	59 ns
Collector Emitter Breakdown Voltage	650V
Turn On Time	76 ns
Test Condition	400V, 30A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 30A
Switching Frequency	50Hz
Turn Off Time-Nom (toff)	514 ns
Gate Charge	168nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	59ns/283ns
Switching Energy	560μJ (on), 1.35mJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$4.797012	$4.797012
10	$4.525483	$45.25483
100	$4.269324	$426.9324
500	$4.027663	$2013.8315
1000	$3.799682	$3799.682

IKW30N65NL5XKSA1 Description

The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.

IKW30N65NL5XKSA1 Features

Low VCE(sat)L5 technology offering

?Very low collector-emitter saturation voltage VC Esat

?Best-in-Class trade off between conduction and switching losses

?650V break down voltage

?Low gate charge QG

?Maximum junction temperature 175°C

?Qualified according to JEDEC for target applications

?Pb-free lead plating

?RoHS compliant

?Complete product spectrum and P Spice models: