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NGTB50N120FL2WG

  • NGTB50N120FL2WG
  • NGTB50N120FL2WG

NGTB50N120FL2WG

NGTB50N120FL2WG

ON Semiconductor

NGTB50N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB50N120FL2WG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 535W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 535W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Reverse Recovery Time 256 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Test Condition 600V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
IGBT Type Trench Field Stop
Gate Charge 311nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 118ns/282ns
Switching Energy 4.4mJ (on), 1.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.15000 $10.15
30 $8.79033 $263.7099
120 $7.67933 $921.5196
510 $6.73261 $3433.6311
1,020 $5.90940 $5.9094
NGTB50N120FL2WG Product Details

NGTB50N120FL2WG Descriptions


The NGTB50N120FL2WG is a durable and cost-effective Field Stop II Trench design that delivers outstanding performance in demanding switching applications with low on-state voltage and minimum switching loss. The IGBT is ideal for solar and UPS applications. A soft and fast co-packaged free wheeling diode with a low forward voltage is included in the device. The operating temperature of NGTB50N120FL2WG is -55°C~175°C TJ and its maximum power dissipation is 535W. NGTB50N120FL2WG has 3 pins and it is available in TO-247-3 packaging way.



NGTB50N120FL2WG Features


  • Extremely Efficient Trench with Field Stop Technology

  • TJmax = 175°C

  • Soft Fast Reverse Recovery Diode

  • Optimized for High-Speed Switching

  • 10 s Short Circuit Capability

  • These are Pb?Free Devices



NGTB50N120FL2WG Applications


  • Solar Inverter

  • Uninterruptible Power Inverter Supplies (UPS)

  • Welding


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