APT50GN120L2DQ2G

new-10%

Manufacturer part number:APT50GN120L2DQ2G

Manufacturer:Microsemi Corporation

Description:IGBT 1200V 134A 543W TO264

Case Package:SOT-23

Datasheet:APT50GN120L2DQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	10.6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	543W
Current Rating	134A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	28 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	320 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	134A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	55 ns
Test Condition	800V, 50A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Continuous Collector Current	134A
Turn Off Time-Nom (toff)	600 ns
IGBT Type	NPT, Trench Field Stop
Gate Charge	315nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	28ns/320ns
Switching Energy	4495μJ (off)
Gate-Emitter Thr Voltage-Max	6.5V
Height	5.21mm
Length	26.49mm
Width	20.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free