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APT30GP60BG

APT30GP60BG

APT30GP60BG

Microsemi Corporation

IGBT 600V 100A 463W TO247

SOT-23

APT30GP60BG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 463W
Current Rating 30A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 463W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 31 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 164 ns
IGBT Type PT
Gate Charge 90nC
Td (on/off) @ 25°C 13ns/55ns
Switching Energy 260μJ (on), 250μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.68000 $10.68

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