FGD3N60UNDF

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Manufacturer part number:FGD3N60UNDF

Manufacturer:ON Semiconductor

Description:FGD3N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGD3N60UNDF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	60W
Terminal Form	GULL WING
Base Part Number	FGD3N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	60W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	6A
Reverse Recovery Time	21ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.4V
Max Breakdown Voltage	600V
Turn On Time	7.4 ns
Test Condition	400V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.52V @ 15V, 3A
Turn Off Time-Nom (toff)	146 ns
IGBT Type	NPT
Gate Charge	1.6nC
Current - Collector Pulsed (Icm)	9A
Td (on/off) @ 25°C	5.5ns/22ns
Switching Energy	52μJ (on), 30μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8.5V
Height	2.3mm
Length	6.6mm
Width	6.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free