IRGP4650D-EPBF

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Manufacturer part number:IRGP4650D-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4650D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4650D-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	268W
Rise Time-Max	42ns
Element Configuration	Single
Power Dissipation	134W
Input Type	Standard
Power - Max	268W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	76A
Reverse Recovery Time	120 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Test Condition	400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 35A
Gate Charge	104nC
Current - Collector Pulsed (Icm)	105A
Td (on/off) @ 25°C	46ns/105ns
Switching Energy	390μJ (on), 632μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	54ns
Height	20.7mm
Length	15.87mm
Width	5.31mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant