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IKZ50N65EH5XKSA1

IKZ50N65EH5XKSA1

IKZ50N65EH5XKSA1

Infineon Technologies

IKZ50N65EH5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKZ50N65EH5XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop™ 5
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 273W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 273W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 85A
Reverse Recovery Time 53 ns
Collector Emitter Breakdown Voltage 650V
Turn On Time 27 ns
Test Condition 400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 311 ns
IGBT Type Trench
Gate Charge 109nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 20ns/250ns
Switching Energy 410μJ (on), 190μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.543200 $10.5432
10 $9.946415 $99.46415
100 $9.383410 $938.341
500 $8.852274 $4426.137
1000 $8.351202 $8351.202
IKZ50N65EH5XKSA1 Product Details

IKZ50N65EH5XKSA1 Description


The Infineon Technologies IKZ50N65EH5XKSA1 is a Highspeed 5 IGBT inTRENCHSTOPTM 5 technology copacked with RAPID1 fast and soft antiparallel diode.



IKZ50N65EH5XKSA1 Features


  • High-speed H5 technology offering

  • Ultra-low loss switching thanks to Kelvin emitterpinin combination withTRENCHSTOPTM5

  • Best-in-class efficiency in hard switching and resonant topologies

  • Plug and play replacement of previous generation IGBTs

  • 650V breakdown voltage

  • Low gate charge QG

  • IGBT co-packed with RAPID1 fast and soft antiparallel diode

  • Maximum junction temperature 175°C

  • Qualified according to JEDEC for target applications



IKZ50N65EH5XKSA1 Applications


  • Uninterruptible power supplies

  • Welding converters

  • Mid to high-range switching frequency converters

  • Solar string inverters


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