APT36GA60BD15

new-10%

Manufacturer part number:APT36GA60BD15

Manufacturer:Microsemi Corporation

Description:IGBT 600V 65A 290W TO-247

Case Package:SOT-23

Datasheet:APT36GA60BD15 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 8™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	290W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	65A
Collector Emitter Breakdown Voltage	600V
Turn On Time	29 ns
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	262 ns
IGBT Type	PT
Gate Charge	18nC
Current - Collector Pulsed (Icm)	109A
Td (on/off) @ 25°C	16ns/122ns
Switching Energy	307μJ (on), 254μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant