IPAN80R450P7XKSA1 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 29 mJ.A device's maximal input capacitance is 770pF @ 500V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 29A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IPAN80R450P7XKSA1 Features

the avalanche energy rating (Eas) is 29 mJ
based on its rated peak drain current 29A.
a 800V drain to source voltage (Vdss)

IPAN80R450P7XKSA1 Applications

There are a lot of Infineon Technologies
IPAN80R450P7XKSA1 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples