IPB120P04P4L03ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPB120P04P4L03ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Published
2011
Series
OptiMOS™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
136W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
136W
Case Connection
DRAIN
Turn On Delay Time
21 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
3.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 340μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
234nC @ 10V
Rise Time
16ns
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
57 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
-120A
Threshold Voltage
-1.7V
Gate to Source Voltage (Vgs)
16V
Max Dual Supply Voltage
-40V
Drain-source On Resistance-Max
0.0052Ohm
Drain to Source Breakdown Voltage
-40V
Pulsed Drain Current-Max (IDM)
480A
Avalanche Energy Rating (Eas)
78 mJ
Max Junction Temperature (Tj)
175°C
Height
4.7mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IPB120P04P4L03ATMA1 Product Details
IPB120P04P4L03ATMA1 Description
The IPB120P04P4L03ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET with minimal switching and conduction power losses for maximum thermal efficiency.
IPB120P04P4L03ATMA1 Features
Logic level
AEC qualified
MSL1 up to 260°C peak reflow
Green device
World's lowest RDS (ON) at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Robust packages with superior quality and reliability