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IPB120P04P4L03ATMA1

IPB120P04P4L03ATMA1

IPB120P04P4L03ATMA1

Infineon Technologies

IPB120P04P4L03ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IPB120P04P4L03ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 136W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 340μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) -120A
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 78 mJ
Max Junction Temperature (Tj) 175°C
Height 4.7mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.26292 $1.26292
2,000 $1.17583 $2.35166
5,000 $1.13227 $5.66135
IPB120P04P4L03ATMA1 Product Details

IPB120P04P4L03ATMA1 Description


The IPB120P04P4L03ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET with minimal switching and conduction power losses for maximum thermal efficiency.



IPB120P04P4L03ATMA1 Features


Logic level

AEC qualified

MSL1 up to 260°C peak reflow

Green device

World's lowest RDS (ON) at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

Robust packages with superior quality and reliability

100% Avalanche tested

The simple interface drive circuit



IPB120P04P4L03ATMA1 Applications


Power Management

Motor Drive & Control

Automotive


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