IPG20N10S4L22AATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
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IPG20N10S4L22AATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Series
OptiMOS™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Max Power Dissipation
60W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-F6
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
5 ns
Power - Max
60W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
22m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
2.1V @ 25μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Rise Time
3ns
Fall Time (Typ)
18 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
16V
Max Dual Supply Voltage
100V
Drain-source On Resistance-Max
0.022Ohm
Avalanche Energy Rating (Eas)
130 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.80538
$4.0269
10,000
$0.78848
$7.8848
IPG20N10S4L22AATMA1 Product Details
IPG20N10S4L22AATMA1 Description
The very first transistor IPG20N10S4L22AATMA1invented was a point contact transistor. The main function of a transistor is to amplify the weak signals and regulate them accordingly. A transistor compromises of semiconductor materials like silicon or germanium or gallium – arsenide.