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IPG20N10S4L22AATMA1

IPG20N10S4L22AATMA1

IPG20N10S4L22AATMA1

Infineon Technologies

IPG20N10S4L22AATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IPG20N10S4L22AATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 60W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5 ns
Power - Max 60W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3ns
Fall Time (Typ) 18 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.022Ohm
Avalanche Energy Rating (Eas) 130 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.80538 $4.0269
10,000 $0.78848 $7.8848
IPG20N10S4L22AATMA1 Product Details

IPG20N10S4L22AATMA1      Description


The very first transistor IPG20N10S4L22AATMA1 invented was a point contact transistor. The main function of a transistor is to amplify the weak signals and regulate them accordingly. A transistor compromises of semiconductor materials like silicon or germanium or gallium – arsenide.

 

IPG20N10S4L22AATMA1  Features


? Dual N-channel Logic Level - Enhancement mode

? AEC Q101 qualified

? MSL1 up to 260°C peak reflow

? 175°C operating temperature

? Green Product (RoHS compliant)

? 100% Avalanche tested

? Feasible for automatic optical inspection (AOI)

 

IPG20N10S4L22AATMA1    Applications


P-N-P transistors

N-P-N transistors

 



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