BSM180D12P3C007

new-10%

Manufacturer part number:BSM180D12P3C007

Manufacturer:ROHM Semiconductor

Description:SIC POWER MODULE

Case Package:SOT-23

Datasheet:BSM180D12P3C007 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mounting Type	Surface Mount
Package / Case	Module
Surface Mount	NO
Operating Temperature	175°C TJ
Packaging	Bulk
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	10
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	880W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X10
Number of Elements	2
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Vgs(th) (Max) @ Id	5.6V @ 50mA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 10V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Drain to Source Voltage (Vdss)	1200V 1.2kV
Drain Current-Max (Abs) (ID)	180A
Pulsed Drain Current-Max (IDM)	360A
DS Breakdown Voltage-Min	1200V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Silicon Carbide (SiC)
RoHS Status	ROHS3 Compliant