IPW65R080CFDFKSA1

new-10%

Manufacturer part number:IPW65R080CFDFKSA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 17.6A, 10V ±20V 5030pF @ 100V 170nC @ 10V 700V TO-247-3

Case Package:SOT-23

Datasheet:IPW65R080CFDFKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	CoolMOS™
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	391W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 17.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.76mA
Input Capacitance (Ciss) (Max) @ Vds	5030pF @ 100V
Current - Continuous Drain (Id) @ 25°C	43.3A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Drain to Source Voltage (Vdss)	700V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	43.3A
Drain-source On Resistance-Max	0.08Ohm
Pulsed Drain Current-Max (IDM)	137A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	1160 mJ
RoHS Status	ROHS3 Compliant