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IPW90R120C3FKSA1

IPW90R120C3FKSA1

IPW90R120C3FKSA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 120m Ω @ 26A, 10V ±20V 6800pF @ 100V 270nC @ 10V 900V TO-247-3

SOT-23

IPW90R120C3FKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 417W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.9mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 36A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 96A
DS Breakdown Voltage-Min 900V
Avalanche Energy Rating (Eas) 1940 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.75000 $19.75
10 $18.08400 $180.84
240 $15.58658 $3740.7792
720 $13.50585 $9724.212
IPW90R120C3FKSA1 Product Details

IPW90R120C3FKSA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1940 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6800pF @ 100V.There is no drain current on this device since the maximum continuous current it can conduct is 36A.There is a peak drain current of 96A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 900V, it should remain above the 900V level.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IPW90R120C3FKSA1 Features


the avalanche energy rating (Eas) is 1940 mJ
based on its rated peak drain current 96A.
a 900V drain to source voltage (Vdss)


IPW90R120C3FKSA1 Applications


There are a lot of Infineon Technologies
IPW90R120C3FKSA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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