IRF9358TRPBF

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IRF9358TRPBF

Manufacturer part number:IRF9358TRPBF

Manufacturer:Infineon Technologies

Description:IRF9358TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF9358TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	2W
Terminal Form	GULL WING
Base Part Number	IRF9358PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	5.7 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16.3m Ω @ 9.2A, 10V
Vgs(th) (Max) @ Id	2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	7.2ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	69 ns
Turn-Off Delay Time	146 ns
Continuous Drain Current (ID)	9.2A
Threshold Voltage	-1.8V
JEDEC-95 Code	MS-012AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0163Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	73A
Avalanche Energy Rating (Eas)	210 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	-1.8 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free