IRG4BC15UD-SPBF

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Manufacturer part number:IRG4BC15UD-SPBF

Manufacturer:Infineon Technologies

Description:IRG4BC15UD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC15UD-SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	260.39037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	49W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	49W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	20ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	14A
Reverse Recovery Time	28 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.95V
Turn On Time	37 ns
Test Condition	480V, 7.8A, 75 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 7.8A
Turn Off Time-Nom (toff)	400 ns
Gate Charge	23nC
Current - Collector Pulsed (Icm)	42A
Td (on/off) @ 25°C	17ns/160ns
Switching Energy	240μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	4.83mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free