Name: IRG4BC30W-STRRP
Brand: Infineon Technologies
SKU: IRG4BC30W-STRRP
Availability: InStock

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IRG4BC30W-STRRP

Manufacturer part number:IRG4BC30W-STRRP

Manufacturer:Infineon Technologies

Description:IRG4BC30W-STRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30W-STRRP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	100W
Base Part Number	IRG4BC30W-SPBF
Element Configuration	Single
Input Type	Standard
Power - Max	100W
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	23A
Collector Emitter Breakdown Voltage	600V
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	23A
Test Condition	480V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Gate Charge	51nC
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	25ns/99ns
Switching Energy	130μJ (on), 130μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant

IRG4BC30W-STRRP Product Details

The IRG4BC30W-STRRP IGBT is designed expressly for Switch-Mode Power Supply and PFC (power factor correction)applications.

Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of the E_off parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher