IRG4PH40UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PH40UD-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
ULTRA FAST SOFT RECOVERY
Voltage - Rated DC
1.2kV
Max Power Dissipation
160W
Current Rating
41A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Rise Time
35ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3.1V
Max Collector Current
41A
Reverse Recovery Time
63 ns
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.43V
Turn On Time
74 ns
Test Condition
800V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 21A
Turn Off Time-Nom (toff)
750 ns
Gate Charge
86nC
Current - Collector Pulsed (Icm)
82A
Td (on/off) @ 25°C
46ns/97ns
Switching Energy
1.8mJ (on), 1.93mJ (off)
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRG4PH40UD-EPBF Product Details
IRG4PH40UD-EPBF Description
IRG4PH40UD-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 40 kHz in hard switching, and>200 kHz in resonant mode. As a new IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with previous generations. The IRG4PH40UD-EPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.