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SIGC61T60NCX7SA1

  • SIGC61T60NCX7SA1
  • SIGC61T60NCX7SA1

SIGC61T60NCX7SA1

SIGC61T60NCX7SA1

Infineon Technologies

SIGC61T60NCX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC61T60NCX7SA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 75A
Test Condition 300V, 75A, 3Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A
IGBT Type NPT
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 65ns/170ns
RoHS Status ROHS3 Compliant
SIGC61T60NCX7SA1 Product Details

SIGC61T60NCX7SA1 Description


SIGC61T60NCX7SA1 is a 600v IGBT chip in NPT technology. The Infineon SIGC61T60NCX7SA1 is used for IGBT-Modules. It is applied to many fields, like Automotive Body electronics & lighting Industrial Building automation Personal electronics Gaming. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SIGC61T60NCX7SA1 is in the sawn-on foil package.



SIGC61T60NCX7SA1 Features


600V NPT technology

100μm chip

short circuit proves

positive temperature coefficient

easy paralleling



SIGC61T60NCX7SA1 Applications


drives

Automotive 

Body electronics & lighting 

Industrial 

Building automation 

Personal electronics 

Gaming


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