SGB15N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SGB15N60ATMA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Max Power Dissipation
139W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
139W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
31A
Collector Emitter Breakdown Voltage
600V
Turn On Time
54 ns
Test Condition
400V, 15A, 21 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 15A
Turn Off Time-Nom (toff)
315 ns
IGBT Type
NPT
Gate Charge
76nC
Current - Collector Pulsed (Icm)
62A
Td (on/off) @ 25°C
32ns/234ns
Switching Energy
570μJ
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.908547
$0.908547
10
$0.857120
$8.5712
100
$0.808604
$80.8604
500
$0.762834
$381.417
1000
$0.719654
$719.654
SGB15N60ATMA1 Product Details
SGB15N60ATMA1 Description
SGB15N60ATMA1 is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. SGB15N60ATMA1 operates between -55°C~150°C TJ, and its maximum collector current is 31A. The SGB15N60ATMA1 has 4 pins and it is available in Tape & Reel (TR) packaging way. IRGS4620DPBF has a 600V Voltage - Collector Emitter Breakdown (Max) value.
SGB15N60ATMA1 Features
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 μs
NPT-Technology for 600V applications offers very tight parameter distribution, high ruggedness, and temperature-stable behaviour
Qualified according to JEDEC1 for target applications