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SGB15N60ATMA1

SGB15N60ATMA1

SGB15N60ATMA1

Infineon Technologies

SGB15N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SGB15N60ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 139W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 139W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 31A
Collector Emitter Breakdown Voltage 600V
Turn On Time 54 ns
Test Condition 400V, 15A, 21 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 15A
Turn Off Time-Nom (toff) 315 ns
IGBT Type NPT
Gate Charge 76nC
Current - Collector Pulsed (Icm) 62A
Td (on/off) @ 25°C 32ns/234ns
Switching Energy 570μJ
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.908547 $0.908547
10 $0.857120 $8.5712
100 $0.808604 $80.8604
500 $0.762834 $381.417
1000 $0.719654 $719.654
SGB15N60ATMA1 Product Details

SGB15N60ATMA1 Description


SGB15N60ATMA1 is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. SGB15N60ATMA1 operates between -55°C~150°C TJ, and its maximum collector current is 31A. The SGB15N60ATMA1 has 4 pins and it is available in Tape & Reel (TR) packaging way. IRGS4620DPBF has a 600V Voltage - Collector Emitter Breakdown (Max) value.



SGB15N60ATMA1 Features


  • 75% lower Eoff compared to previous generation combined with low conduction losses

  • Short circuit withstand time – 10 μs

  • NPT-Technology for 600V applications offers very tight parameter distribution, high ruggedness, and temperature-stable behaviour

  • Qualified according to JEDEC1 for target applications

  • Pb-free lead plating; RoHS compliant



SGB15N60ATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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