FGA60N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGA60N60UFDTU Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
298W
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
298W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
120A
Reverse Recovery Time
47 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Turn On Time
83 ns
Test Condition
400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 60A
Turn Off Time-Nom (toff)
204 ns
IGBT Type
Field Stop
Gate Charge
188nC
Current - Collector Pulsed (Icm)
180A
Td (on/off) @ 25°C
23ns/130ns
Switching Energy
1.81mJ (on), 810μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
80ns
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
In-Stock:3814 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.25000
$6.25
10
$5.64400
$56.44
450
$4.46251
$2008.1295
900
$4.06876
$3661.884
FGA60N60UFDTU Product Details
FGA60N60UFDTU Description
FGA60N60UFDTU is an IGBT Transistor with N-Channel in TO-3P-3L package. Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. This IGBT Transistor has an operating temperature range of -55°C to 150°C.?
FGA60N60UFDTU Features
High Current Capability Low saturation voltage: VCE(sat) =1.9V @ IC = 60A High Input Impedance Fast switching: EOFF =14uJ/A RoHS compliant FGA60N60UFDTU Applications
Solar Inverter, UPS, Welder, PFC Energy Generation & Distribution
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