FGA60N60UFDTU

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Manufacturer part number:FGA60N60UFDTU

Manufacturer:ON Semiconductor

Description:FGA60N60UFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA60N60UFDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	298W
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	298W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	120A
Reverse Recovery Time	47 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	600V
Turn On Time	83 ns
Test Condition	400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 60A
Turn Off Time-Nom (toff)	204 ns
IGBT Type	Field Stop
Gate Charge	188nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	23ns/130ns
Switching Energy	1.81mJ (on), 810μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	80ns
Height	20.1mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant