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HGTG12N60A4

HGTG12N60A4

HGTG12N60A4

ON Semiconductor

HGTG12N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGTG12N60A4 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 600V
Max Power Dissipation 167W
Current Rating 54A
Base Part Number HGTG12N60
Element Configuration Single
Power Dissipation 167W
Input Type Standard
Rise Time 8ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Gate Charge 78nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55μJ (on), 50μJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
HGTG12N60A4 Product Details

HGTG12N60A4 Description


HGTG12N60A4 belongs to the family of SMPS series N-channel IGBTs provided by ON Semiconductor optimized for high-frequency switch-mode power supplies. It integrates the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. IGBT HGTG12N60A4 is well suited for many high voltage switching applications operating at high frequencies that require low conduction losses.



HGTG12N60A4 Features


  • High input impedance

  • Low on-state conduction loss

  • Available in the TO-247 package

  • Lower on-state voltage drop

  • Typical fall time of 70ns at TJ = 125oC



HGTG12N60A4 Applications


  • Uninterruptible power supply

  • High voltage switching applications


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