HGTG12N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
HGTG12N60A4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Voltage - Rated DC
600V
Max Power Dissipation
167W
Current Rating
54A
Base Part Number
HGTG12N60
Element Configuration
Single
Power Dissipation
167W
Input Type
Standard
Rise Time
8ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
54A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Test Condition
390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Gate Charge
78nC
Current - Collector Pulsed (Icm)
96A
Td (on/off) @ 25°C
17ns/96ns
Switching Energy
55μJ (on), 50μJ (off)
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3029 items
HGTG12N60A4 Product Details
HGTG12N60A4 Description
HGTG12N60A4 belongs to the family of SMPS series N-channel IGBTs provided by ON Semiconductor optimized for high-frequency switch-mode power supplies. It integrates the high input impedance of MOSFETs and the low on-state conduction loss of bipolar transistors. IGBT HGTG12N60A4 is well suited for many high voltage switching applications operating at high frequencies that require low conduction losses.
HGTG12N60A4 Features
High input impedance
Low on-state conduction loss
Available in the TO-247 package
Lower on-state voltage drop
Typical fall time of 70ns at TJ = 125oC
HGTG12N60A4 Applications
Uninterruptible power supply
High voltage switching applications
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