IXGH32N100A3

new-10%

Manufacturer part number:IXGH32N100A3

Manufacturer:IXYS

Description:IGBT 1000V 75A 300W TO247AD

Case Package:SOT-23

Datasheet:IXGH32N100A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED
Max Power Dissipation	300W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	GENERAL PURPOSE SWITCHING
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	75A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	75 ns
Test Condition	800V, 32A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 32A
Turn Off Time-Nom (toff)	1170 ns
IGBT Type	PT
Gate Charge	87nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	24ns/385ns
Switching Energy	2.6mJ (on), 9.5mJ (off)
RoHS Status	ROHS3 Compliant