STGFW30V60F                          Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGFW30V60F                       Features

? Maximum junction temperature: TJ = 175 °C

? Tail-less switching off

? VCE(sat) = 1.85 V (typ.) @ IC = 30 A

? Tight parameter distribution

? Safe paralleling

? Low thermal resistance

STGFW30V60F                       Applications

? Photovoltaic inverters

? Uninterruptible power supply

? Welding

? Power factor correction

? Very high frequency converters