STGD10NC60HDT4

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Manufacturer part number:STGD10NC60HDT4

Manufacturer:STMicroelectronics

Description:STGD10NC60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD10NC60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	62W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGD10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	62W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	22 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	19 ns
Test Condition	390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Turn Off Time-Nom (toff)	247 ns
Gate Charge	19.2nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	14.2ns/72ns
Switching Energy	31.8μJ (on), 95μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
RoHS Status	ROHS3 Compliant