IRGSL14C40LPBF

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Manufacturer part number:IRGSL14C40LPBF

Manufacturer:Infineon Technologies

Description:IRGSL14C40LPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGSL14C40LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW SATURATION VOLTAGE
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	430V
Max Power Dissipation	125W
Peak Reflow Temperature (Cel)	260
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Logic
Transistor Application	AUTOMOTIVE IGNITION
Rise Time	2.8μs
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.75V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	430V
Collector Emitter Saturation Voltage	1.4V
Turn On Time	3700 ns
Vce(on) (Max) @ Vge, Ic	1.75V @ 5V, 14A
Gate Charge	27nC
Td (on/off) @ 25°C	900ns/6μs
Gate-Emitter Voltage-Max	12V
Gate-Emitter Thr Voltage-Max	2.2V
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free