IRG4PC50UD-EPBF Description

IRG4PC50UD-EPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. Generation 4 IGBTs offer the highest efficiencies available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing. IRG4PC50UD-EPBF is designed as a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs.

IRG4PC50UD-EPBF Features

Voltage - Collector Emitter Breakdown (Max): 600 V

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Generation 3

IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Vce(on) (Max) @ Vge, Ic: 2 V

Power - Max:200 W

Switching Energy: 0.99 mJ (on), 0.59 mJ (off)

Input Type: Standard

Gate Charge: 90nC

Td (on/off) @ 25°C: 46 ns/140 ns

Operating Temperature: -55°C to 150°C (TJ)

Mounting Type: Through Hole

Supplier Device Package: TO-247AC (TO-247-3)

IRG4PC50UD-EPBF Applications

Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Datacom module 

Enterprise systems 

Enterprise projectors