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RGTH80TS65DGC11

RGTH80TS65DGC11

RGTH80TS65DGC11

ROHM Semiconductor

IGBT 650V 70A 234W TO-247N

SOT-23

RGTH80TS65DGC11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 234W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 234W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 70A
Reverse Recovery Time 58 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 84 ns
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Continuous Collector Current 40A
Turn Off Time-Nom (toff) 194 ns
IGBT Type Trench Field Stop
Gate Charge 79nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 34ns/120ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.925570 $18.92557
10 $17.854311 $178.54311
100 $16.843690 $1684.369
500 $15.890274 $7945.137
1000 $14.990824 $14990.824

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