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IRG4PH40UDPBF

IRG4PH40UDPBF

IRG4PH40UDPBF

Infineon Technologies

IRG4PH40UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PH40UDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 160W
Current Rating 41A
Number of Elements 1
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application POWER CONTROL
Rise Time 59ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 150 ns
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 41A
Reverse Recovery Time 63 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.43V
Turn On Time 74 ns
Test Condition 800V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A
Turn Off Time-Nom (toff) 750 ns
Gate Charge 86nC
Current - Collector Pulsed (Icm) 82A
Td (on/off) @ 25°C 46ns/97ns
Switching Energy 1.8mJ (on), 1.93mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.61000 $6.61
10 $5.93800 $59.38
100 $4.86550 $486.55
500 $4.14190 $2070.95
1,000 $3.49316 $3.49316
IRG4PH40UDPBF Product Details

IRG4PH40UDPBF Description


The IRG4PH40UDPBF is a 1200V Ultrafast 5 to 40kHz co-pack IGBT with a soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes are optimized for performance and used in bridge configurations. The latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. The IRG4PH40UDPBF is offered in the TO-247-3 package. It is specified for operation from –55°C to +150°C.



IRG4PH40UDPBF Features


  • UltraFast Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz   in resonant mode

  • The new IGBT design provides tighter parameter distribution and higher efficiency than previous   generations

  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use    in bridge configurations

  • Industry-standard TO-247AC package

  • Lead-Free



IRG4PH40UDPBF Applications


  • Solar energy

  • Wind energy

  • Hydro energy

  • Tidal energy

  • Geothermal energy

  • Biomass energy 


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