IRG4PSH71UDPBF

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Manufacturer part number:IRG4PSH71UDPBF

Manufacturer:Infineon Technologies

Description:IRG4PSH71UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PSH71UDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA FAST SWITCHING
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	350W
Current Rating	99A
Number of Elements	1
Element Configuration	Single
Power Dissipation	350W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	46 ns
Transistor Application	POWER CONTROL
Rise Time	77ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	350 ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	99A
Reverse Recovery Time	110 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.52V
Turn On Time	121 ns
Test Condition	960V, 70A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 70A
Turn Off Time-Nom (toff)	810 ns
Gate Charge	380nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	46ns/250ns
Switching Energy	8.8mJ (on), 9.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	15.24mm
Length	10.5156mm
Width	4.699mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free