IRG7PSH73K10PBF

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Manufacturer part number:IRG7PSH73K10PBF

Manufacturer:Infineon Technologies

Description:IRG7PSH73K10PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PSH73K10PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.15kW
Number of Elements	1
Element Configuration	Single
Power Dissipation	1.15kW
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	63 ns
Power - Max	1150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	267 ns
Collector Emitter Voltage (VCEO)	2.3V
Max Collector Current	220A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2V
Turn On Time	172 ns
Test Condition	600V, 75A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 75A
Turn Off Time-Nom (toff)	567 ns
IGBT Type	Trench
Gate Charge	360nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	63ns/267ns
Switching Energy	7.7mJ (on), 4.6mJ (off)
Gate-Emitter Thr Voltage-Max	7.5V
Height	20.8mm
Length	16.0782mm
Width	5.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free