IRG8P15N120KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG8P15N120KDPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
125W
Reach Compliance Code
unknown
Element Configuration
Single
Input Type
Standard
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
15A
Reverse Recovery Time
60 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Collector Emitter Saturation Voltage
1.7V
Test Condition
600V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 10A
Gate Charge
98nC
Td (on/off) @ 25°C
15ns/170ns
Switching Energy
600μJ (on), 600μJ (off)
Height
20.7mm
Length
15.87mm
Width
5.31mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.59000
$2.59
500
$2.5641
$1282.05
1000
$2.5382
$2538.2
1500
$2.5123
$3768.45
2000
$2.4864
$4972.8
2500
$2.4605
$6151.25
IRG8P15N120KDPBF Product Details
IRG8P15N120KDPBF Description
IRG8P15N120KDPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 10μs short circuit SOA, it is able to increase the margin for the short circuit protection scheme. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides rugged transient performance based on square RBSOA and high ILM- rating.