Descriptions

The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.

Features

● Optimized for specific application conditions

● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

● IGBT co-packaged with HEXFREDTM ultrafast,

● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations

● Industry-standard TO-220AB package

● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).

● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

● Lead-Free

Applications

● HVAC

● Consumer Electronics

● Power Management

● Switching

● Amplification

● Converters

● Automatic Switch