FGH60N60UFDTU-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH60N60UFDTU-F085 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2016
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
298W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
298W
Collector Emitter Voltage (VCEO)
2.9V
Max Collector Current
120A
Reverse Recovery Time
76 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
IGBT Type
Field Stop
Gate Charge
192nC
Current - Collector Pulsed (Icm)
180A
Td (on/off) @ 25°C
29ns/138ns
Switching Energy
2.47mJ (on), 810μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.378800
$3.3788
10
$3.187547
$31.87547
100
$3.007120
$300.712
500
$2.836906
$1418.453
1000
$2.676326
$2676.326
FGH60N60UFDTU-F085 Product Details
FGH60N60UFDTU-F085 Description
FGH60N60UFDTU-F085 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGH60N60UFDTU-F085 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.